Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6sc02116f Click here for additional data file.
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چکیده
Figure S1. EDS spectrum of Ta-doped TiO2 as a function of ratio of cycles of TaOx to TiO2, a) 1:150, b) 1:100, and c) 1:50. d) Atomic percentage of Ta as a function of ratio of cycles of TaOx:TiO2.
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Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting.
Tantalum nitride, Ta3N5, is one of the most promising materials for solar energy driven water oxidation. One significant challenge of this material is the high temperature and long duration of ammonolysis previously required to synthesize it, which has so far prevented the use of transparent conductive oxide (TCO) substrates to be used which would allow sub-bandgap light to be transmitted to a ...
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